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高感度背散射电子侦测器：
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| Solid State Backscattered Electron Detector |
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This state-of-the-art Backscattered detector uses a large silicon diode exclusively manufactured for KED to our own specific design and characterised for electron detection. It is highly compact, with a four quadrant annular construction, which achieves almost perfect symmetry virtually eliminating topographic information and producing a pure compositional signal. However, if topographic information is required, the ability to select quadrants allows this to be done.
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- Excellent atomic number resolution 0.1Z at Z=30
- High bandwidth TV operation, low noise for slow scan
- Four quadrant detector for composition or topographic studies
- Choice of detectors for normal, low voltage, UHV, Cathodoluminescence or STEM
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